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10 sec steady-state 10 sec steady-state v ds v gs 9.1 7.6 7.5 6.2 7.3 6.1 6.0 5.0 i dm i ar e ar 2 1.4 2 1.4 1.3 0.9 1.3 0.9 t j , t stg symbol t 10s steady-state steady-state r jl symbol t 10s steady-state steady-state r jl 100 30 20 30 20 5013 25 a max fet1 max fet2 thermal characteristics fet1(intergrated schottky diode)maximum junction-to-ambient a r ja continuous draincurrent af t a =25c junction and storage temperature range t a =70c i dsm gate-source voltage drain-source voltage parameter symbol power dissipation a t a =25c p dsm t a =70c pulsed drain current b units absolute maximum ratings t a =25c unless otherwise noted vv c maximum junction-to-ambient a w a -55 to 150 -55 to 150 1743 avalanche current b a repetitive avalanche energy l=0.3mh b mj maximum junction-to-lead c thermal characteristics fet2maximum junction-to-ambient a r ja maximum junction-to-ambient a c/wc/w c/w parameterparameter units c/w c/wc/w units typ typ maximum junction-to-lead c 7432 4874 32 48 max62.5 9040 max62.5 9040 AO4940asymmetric dual n-channel enhancement mode field effect transistor features fet1 fet2 v ds (v) = 30v v ds (v) = 30v i d = 9.1a i d =7.5a (v gs = 10v) r ds(on) < 15m < 23m (v gs = 10v) r ds(on) < 23m < 36m (v gs = 4.5v) uis tested! rg,ciss,coss,crss tested general description the AO4940 uses advanced trench technology to provideexcellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronousrectifier combination for use in dc-dc converters. a monolithically integrated schottky diode in parallel with the synchronous mosfet to boost efficiency further. standard product AO4940 is pb-free (meets rohs & sony 259specifications). soic-8 srfet tm srfet tm s oft r ecovery mos fet : integrated schottky diode alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.1 t j =125c 10 i gss 0.1 a v gs(th) gate threshold voltage 1.3 1.65 2.5 v i d(on) 100 a 12.5 15 t j =125c 18 22 18.5 23 m g fs 26 s v sd 0.43 0.5 v i s 3 a c iss 903 1100 pf c oss 225 pf c rss 91 pf r g 1.7 3.0 q g (10v) 15.3 20 q g (4.5v) 7.8 10 nc q gs 2.0 nc q gd 3.9 nc t d(on) 5.0 ns t r 9.2 ns t d(off) 17.8 ns t f 4.4 ns t rr 17 20 ns q rr 30.0 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery timebody diode reverse recovery charge i f =9.1a, di/dt=300a/ s drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =9.1a reverse transfer capacitance i f =9.1a, di/dt=300a/ s v ds =v gs i d =250 a fet1(intergrated schottky diode) electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 20v gate-body leakage current r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage maximum body-diode + schottky continuous current input capacitance output capacitance dynamic parameters m v gs =4.5v, i d =7.3a i s =1a,v gs =0v v ds =5v, i d =9.1a turn-on rise timeturn-off delaytime v gs =10v, v ds =15v,r l =1.65 , r gen =3 turn-off fall time turn-on delaytime total gate charge v gs =10v, v ds =15v, i d =9.1a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate chargegate source charge gate resistance v gs =0v, v ds =0v, f=1mhz a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design.b: repetitive rating, pulse width limited by junction temperature t j(max) =150c. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev 0: mar. 2007 alpha & omega semiconductor, ltd. www.aosmd.com
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AO4940 fet1: typical electrical and thermal characteristics 0fvlobwh8lmloxexm mcm mcs scm smcm smmcm smmmcm mcms mcs s sm smm v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) sm i smai sa mcsi 0w m 0 :3vv guaur(n smm e t:oipv 4sdm9w e l 4yd9w smi si m y f a h sm m d sm sd ym q g (nc) figure 7: gate-charge characteristics v gs (volts) m ymm fmm amm hmm smmm symm sfmm m d sm sd ym yd -m v ds (volts) figure 8: capacitance characteristics capacitance (pf) w uii w 5ii w pii 1 0 4sd1 b 0 4ecsl m ym fm am hm smm mcmmms mcmms mcms mcs s sm smm pulse width (s) figure10: single pulse power rating junction-to- ambient (note e) power (w) e t:oipv 4sdm9w e l 4yd9w mcmms mcms mcs s sm mcmmmms mcmmms mcmms mcms mcs s sm smm smmm pulse width (s) figure 11: normalized maximum transient thermal impedance (note e) z 1 1 1 1 ja normalized transient thermal resistance 04e 5r we e t28e 4e l h8 0o cg 1 tl cm 1 tl m 1 tl 4em9wwl e 5r e 8 0 brhn(i=(rnurnh5pn(p 04mcd2hmc-2hmcs2hmcmd2hmcmy2hmcms2hiurng(hfugi( urng(h8ugi( alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.3 1.6 2.5 v i d(on) 50 a 19 23 t j =125c 27 34 29 36 m g fs 22 s v sd 0.75 1 v i s 3 a c iss 621 820 pf c oss 118 pf c rss 85 pf r g 0.8 1.5 q g (10v) 11.3 17 nc q g (4.5v) 5.7 8.5 nc q gs 2.1 nc q gd 3 nc t d(on) 4.5 ns t r 3.1 ns t d(off) 15.1 ns t f 2.7 ns t rr 15.5 21 ns q rr 7.1 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous currentinput capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =7.5a total gate chargegate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise timeturn-off delaytime v gs =10v, v ds =15v, r l =2 , r gen =3 turn-off fall time total gate chargegate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =7.5a r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain currentgate-body leakage current fet2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery timebody diode reverse recovery charge i f =7.5a, di/dt=100a/ s drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =7.5a reverse transfer capacitance i f =7.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design.b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev 0: mar. 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 fet2: typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design,functions and reliability without notice. 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4.5v 6v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 15 20 25 30 35 40 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7.5a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com

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